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PHPT61002NYC
100V, 2 A NPN high power bipolar transistor
9 January 2014
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT61002PYC
2. Features and benefits
• High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation
3. Applications
• Load switch • Power management • Linear mode voltage regulator • Backlighting apllications
4. Quick reference data
Table 1.