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PHPT60603PY
60 V, 3 A PNP high power bipolar transistor
13 January 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT60603NY.
2. Features and benefits
• High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation • AEC-Q101 qualified
3. Applications
• Power management • Load switch • Linear mode voltage regulator • Backlighting applications
4. Quick reference data
Table 1.
PHPT60603PY Datasheet
