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PHPT60603NY
60V, 3 A NPN high power bipolar transistor
10 January 2014
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60603PY
2. Features and benefits
• High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation • AECQ-101 qualified.
3. Applications
• Power management • Load switch • Linear mode voltage regulator • Backlighting apllications
4. Quick reference data
Table 1.