NX3020NAKT
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Very fast switching
- Trench MOSFET technology
- ESD protection
- Low threshold voltage
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- -
VGS gate-source voltage
-20
- 20
ID drain current
VGS = 10 V; Tamb = 25 °C
[1]
- -
180 m A
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 100 m A; Tj = 25 °C resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
30 V, 180 m A N-channel Trench...
