NX3020NAKS
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Very fast switching
- Trench MOSFET technology
- ESD protection
- Low threshold voltage
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 30 V
VGS gate-source voltage
-20
- 20 V
ID drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
- - 180 m A
Static characteristics (per transistor)
RDSon drain-source on-state VGS = 10 V; ID = 100 m A; Tj = 25 °C resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
30 V, 180 m A dual N-channel Trench MOSFET
5. Pinning...
