NX3020NAK
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Very fast switching
- Trench MOSFET technology
- ESD protection
- Low threshold voltage
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 100 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20
- 20 V
[1]
- - 200 m A
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
30 V, single N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin...
