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BUK9Q29-60E - 60V N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology.
  • Fully automotive qualified to AEC-Q101 at 175°C.
  • Side-wettable flanks for optical solder inspection 3.

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Full PDF Text Transcription

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BUK9Q29-60E 60 V, N-channel Trench MOSFET 18 April 2025 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • Fully automotive qualified to AEC-Q101 at 175°C • Side-wettable flanks for optical solder inspection 3. Applications • LED Lighting • Switching circuits • DC-DC conversion 4. Quick reference data Table 1.
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