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CCPAK1212i
BUK7T1R4-100L
N-channel 100V, 1.35mΩ, Standard Level MOSFET in
CCPAK1212i
26 August 2025
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212i (SOT8005A) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
2. Features and benefits
Fully automotive qualified to AEC-Q101:
• 175 °C rating suitable for thermally demanding automotive environments.
Trench 12 split-gate trench technology:
• Reduced cell pitch enables enhanced power density resulting in lower conduction losses.