Datasheet4U Logo Datasheet4U.com

BUK7A1R3-100L - 100V N-channel Standard Level MOSFET

Description

Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package.

This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.

Features

  • Fully automotive qualified to AEC-Q101:.
  • 175 °C rating suitable for thermally demanding automotive environments. Trench 12 split-gate trench technology:.
  • Reduced cell pitch enables enhanced power density resulting in lower conduction losses.
  • Fast and efficient switching with optimal damping for low spiking and improved switching efficiency. CCPAK mounting base.
  • Large cross-sectional area of exposed drain tab for excellent thermal dissipation and low steady st.

📥 Download Datasheet

Datasheet Details

Part number BUK7A1R3-100L
Manufacturer Nexperia
File Size 381.44 KB
Description 100V N-channel Standard Level MOSFET
Datasheet download datasheet BUK7A1R3-100L Datasheet

Full PDF Text Transcription

Click to expand full text
CCPAK1212 BUK7A1R3-100L N-channel 100V, 1.3mΩ, Standard Level MOSFET in CCPAK1212 26 August 2025 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability. 2. Features and benefits Fully automotive qualified to AEC-Q101: • 175 °C rating suitable for thermally demanding automotive environments. Trench 12 split-gate trench technology: • Reduced cell pitch enables enhanced power density resulting in lower conduction losses.
Published: |