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BUK7880-55A - N-channel MOSFET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

2.

Features

  • AEC Q101 compliant.
  • Low conduction losses due to low on-state resistance.
  • Suitable for standard level gate drive sources 3.

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Full PDF Text Transcription

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BUK7880-55A N-channel TrenchMOS standard level FET 19 June 2015 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC Q101 compliant • Low conduction losses due to low on-state resistance • Suitable for standard level gate drive sources 3. Applications • 12 V and 24 V loads • Automotive systems • General purpose power switching • Motors, lamps and solenoids 4. Quick reference data Table 1.
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