BAV170M - Dual common cathode low-leakage diode

Nexperia

General Description

Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.

Key Features

High switching speed: trr = 0.8 µs.
Low leakage current: IR = 3 pA.
Repetitive peak reverse voltage VRRM ≤ 85 V.
Low capacitance Cd = 2 pF.
Ultra small SMD plastic package.
Low package height of 0.48 mm.
AEC-Q101 qualified 3.

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BAV170M dual common cathode low-leakage diode by Nexperia - Datasheet Preview

Datasheet Details

Part number	BAV170M
Manufacturer	Nexperia
File Size	672.42 KB
Description	Dual common cathode low-leakage diode
Datasheet	BAV170M Datasheet

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BAV170M Dual common cathode low-leakage diode 19 May 2016 Product data sheet 1. General description Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr = 0.8 µs • Low leakage current: IR = 3 pA • Repetitive peak reverse voltage VRRM ≤ 85 V • Low capacitance Cd = 2 pF • Ultra small SMD plastic package • Low package height of 0.48 mm • AEC-Q101 qualified 3. Applications • Low-leakage current applications • General-purpose switching 4. Quick reference data Table 1.