BAV170
Silicon Low Leakage Diode Array
- Low-leakage applications
- Medium speed switching times
- Pb-free (Ro HS pliant) package1)
- Qualified according AEC Q101
BAV170...
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Type BAV170
Package SOT23
Configuration mon cathode
Marking JXs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs
VR VRM IF IFSM t=1s
Total power dissipation TS ≤ 35°C Junction temperature Storage temperature
Ptot
Tj Tstg
Value 80 85 200
4.5 0.5 250
150 -65 ... 150
Unit V m A A m W °C
Thermal Resistance Parameter Junction
- soldering point2) BAV170
Symbol Rth JS
Value ≤ 460
Unit K/W
1Pb-containing package may be available upon special request 2For calculation of Rth JA please refer to Application Note Thermal Resistance
1 2007-04-19
BAV170...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value...
