BAV170
FEATURES
- Plastic SMD package
- Low leakage current: typ. 3 p A
- Switching time: typ. 0.8 µs
- Continuous reverse voltage: max. 75 V
- Repetitive peak reverse voltage: max. 85 V
- Repetitive peak forward current: max. 500 m A.
DESCRIPTION
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in mon cathode configuration.
PINNING
PIN 1 2 3
DESCRIPTION anode anode mon cathode
APPLICATION
- Low-leakage current applications in surface mounted circuits.
MARKING
TYPE NUMBER BAV170
MARKING CODE(1)
JX-
Note
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. handbook, 4 columns
Top view
21 3
MAM108
Fig.1 Simplified outline (SOT23) and symbol.
2003 Mar 25
NXP Semiconductors
Low-leakage double diode
Product data sheet
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode VRRM VR IF
IFRM IFSM
Ptot Tstg Tj repetitive...
