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LMG2650 - GaN power-FET half bridge

General Description

The LMG2650 is a 650V 95mΩ GaN power-FET half bridge.

The LMG2650 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.

Key Features

  • 650V GaN power-FET half bridge.
  • 95mΩ low-side and high-side GaN FETs.
  • Integrated gate drivers with.

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Full PDF Text Transcription for LMG2650 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LMG2650. For precise diagrams, and layout, please refer to the original PDF.

ADVANCE INFORMATION LMG2650 SNOSDI8 – MAY 2024 LMG2650 650V 95mΩ GaN Half Bridge with Integrated Driver and Current Sense Emulation 1 Features • 650V GaN power-FET half b...

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ver and Current Sense Emulation 1 Features • 650V GaN power-FET half bridge • 95mΩ low-side and high-side GaN FETs • Integrated gate drivers with <100ns low propagation delays • Programmable turn-on slew rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins • Low-side (INL) / high-side (INH) gate-drive interlock • High-side (INH) gate-drive signal level shifter • Smart-switched bootstrap diode function • High-side start up : <8µs • Low-side / high-side cycle-by-cycle overcurrent protection • Overtemperature protectio

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