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LMG2100R044 - 35A GaN Half-Bridge Power Stage

General Description

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs.

The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.

Key Features

  • Integrated 4.4mΩ half-bridge GaN FETs and driver.
  • 90V continuous, 100V pulsed voltage rating.
  • Package optimized for easy PCB layout.
  • High slew rate switching with low ringing.
  • 5V external bias power supply.
  • Supports 3.3V and 5V input logic levels.
  • Gate driver capable of up to 10MHz switching.
  • Excellent propagation delay (33ns typical) and matching (2ns typical).
  • Internal bootstrap supply voltage clamping to prevent.

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Full PDF Text Transcription for LMG2100R044 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LMG2100R044. For precise diagrams, and layout, please refer to the original PDF.

LMG2100R044 SNOSDF9B – JULY 2023 – REVISED MARCH 2024 LMG2100R044 100V, 35A GaN Half-Bridge Power Stage 1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90...

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age 1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.

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