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LMG2610 - Integrated 650-V GaN Half Bridge

General Description

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications.

Key Features

  • 650-V GaN power-FET half bridge.
  • 170-mΩ low-side and 248-mΩ high-side GaN FETs.
  • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control.
  • Current-sense emulation with high-bandwidth and high accuracy.
  • Low-side / high-side gate-drive interlock.
  • High-side gate-drive signal level shifter.
  • Smart-switched bootstrap diode function.
  • High-side start up : < 8 us.
  • Low-side / high-side cycl.

📥 Download Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMG2610 SNOSDE2A – OCTOBER 2022 – REVISED DECEMBER 2022 LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive interlock • High-side gate-drive signal level shifter • Smart-switched bootstrap diode function • High-side start up : < 8 us • Low-side / high-side cycle-by-cycle over-current protection • Over-temperature protection with FLT pin reporting • AUX idle quiescent current: 240 μA • AUX standby quiescent current: 50 μA • BST idle quiescent current: 60 μA • Maximum supply and input