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CSD17483F4 - N-Channel MOSFET

Description

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • 1 Low On-Resistance.
  • Low Qg and Qgd.
  • Low-Threshold Voltage.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35-mm Height.
  • Integrated ESD Protection Diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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Full PDF Text Transcription

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD17483F4 SLPS447E – JULY 2013 – REVISED APRIL 2018 CSD17483F4 30-V N-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Low Qg and Qgd • Low-Threshold Voltage • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-Low Profile – 0.
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