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CSD17304Q3
www.ti.com
SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17304Q3
RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage - V
FEATURES
1
•2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package
APPLICATIONS
• Notebook Point of Load • Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
DESCRIPTION
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
CSD17304Q3 Datasheet
