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CSD17303Q5 - N-Channel MOSFET

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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Full PDF Text Transcription

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CSD17303Q5 www.ti.com SLPS246B – JANUARY 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples: CSD17303Q5 FEATURES 1 •2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Notebook Point-of-Load • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
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