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CSD17381F4 - 30V N-Channel MOSFET

Description

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Features

  • Ultra-low on-resistance.
  • Ultra-low Qg and Qgd.
  • Low threshold voltage.
  • Ultra-small footprint (0402 case size).
  • 1.0 mm × 0.6 mm.
  • Ultra-low profile.
  • 0.36 mm height.
  • Integrated ESD protection diode.
  • Rated >4 kV HBM.
  • Rated >2 kV CDM.
  • Lead and halogen free.
  • RoHS compliant 2.

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Full PDF Text Transcription

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CSD17381F4 SLPS411G – APRIL 2013 – REVISED JANUARY 2022 CSD17381F4 30-V N-Channel FemtoFET™ MOSFET 1 Features • Ultra-low on-resistance • Ultra-low Qg and Qgd • Low threshold voltage • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.36 mm height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for load switch applications • Optimized for general purpose switching applications • Single-cell battery applications • Handheld and mobile applications 3 Description This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.
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