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CSD17309Q3 - N-Channel MOSFET

Description

This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Features

  • 1 Optimized for 5 V Gate Drive.
  • Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3 mm × 3.3 mm Plastic Package 2.

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Full PDF Text Transcription

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17309Q3 SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET™ Power MOSFET 1 Features •1 Optimized for 5 V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • Notebook Point of Load • Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems 3 Description This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
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