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ZXMN3F31DN8 - DUAL N-CHANNEL MOSFET

Description

This new generation Trench MOSFET from Zetex

Features

  • low onresistance achievable with 4.5V gate drive. Features.
  • Low on-resistance.
  • 4.5V gate drive capability.

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ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel MOSFET
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Full PDF Text Transcription

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ZXMN3F31DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.024 @ VGS= 10V 0.039 @ VGS= 4.5V ID (A) 7.3 5.7 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features • Low on-resistance • 4.5V gate drive capability Applications • DC-DC Converters • Power management functions • Load switching • Motor control • Back lighting Ordering information DEVICE ZXMN3F31DN8TA Reel size (inches) 7 Tape width (mm) 12 G1 Quantity per reel 500 D1 S1 S1 G1 S2 G2 Device marking ZXMN 3F31D G2 D2 S2 D1 D1 D2 D2 Issue 2 - February 2008 © Zetex Semiconductors plc 2008 1 www.zetex.
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