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ZXMN3F318DN8 - 30V SO8 Asymmetrical dual N-channel MOSFET

Description

This new generation dual Trench MOSFET from Zetex

Features

  • low on-resistance achievable with low (4.5V) gate drive. Features.
  • Low on-resistance.
  • 4.5V gate drive capability.
  • Low profile SOIC package.

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ZXMN3F318DN8TA 30V SO8 Asymmetrical dual N-channel MOSFET
ZXMN3F31DN8 DUAL N-CHANNEL MOSFET
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Full PDF Text Transcription

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DISCONTINUED Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V(BR)DSS QG (nC) Q1 30 12.9 Q2 30 9 RDS(on) (Ω) 0.024 @ VGS= 10V 0.039 @ VGS= 4.5V 0.035 @ VGS= 10V 0.055 @ VGS= 4.5V ID (A) 7.3 5.7 6 4.8 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable with low (4.5V) gate drive. Features • Low on-resistance • 4.5V gate drive capability • Low profile SOIC package Applications • DC-DC Converters • SMPS • Load switching • Motor control • Backlighting Q2 Q1 Ordering information Device ZXMN3F318DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 Device marking ZXMN 3F318 Pinout – top view Issue 1 – March 2008 © Zetex Semiconductors plc 2008 1 www.zetex.
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