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ZXMN3F30FH - 30V SOT23 N-channel MOSFET

Description

This new generation Trench MOSFET from Zetex

Features

  • low onresistance achievable with 4.5V gate drive. Features.
  • Low on-resistance.
  • 4.5V gate drive capability.
  • SOT23.

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Full PDF Text Transcription

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ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.047 @ VGS= 10V 0.065 @ VGS= 4.5V ID (A) 4.6 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features • Low on-resistance • 4.5V gate drive capability • SOT23 Applications • DC-DC Converters • Power management functions • Motor Control D G S Ordering information DEVICE ZXMN3F30FHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 D S Device marking KNA G Top view Issue 2 - February 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN3F30FH Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ VGS=4.5; TA=25°C(b) @ VGS=4.5; TA=70°C(b) @ VGS=4.
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