The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SOT323 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES
ISSUE 1 - NOVEMBER 1998 . 7
ZUMD70-04 ZUMD70-05
3 2
! !
1
SERIES PAIR Device Type: ZUMD70-04 Partmarking Detail: D94
COMMON CATHODE Device Type: ZUMD70-05 Partmarking Detail: D95
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j :T stg VALUE 330 -55 to +150 UNIT mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Breakdown Voltage Reverse Leakage Current Forward Voltage Forward Current Capacitance Effective Minority Lifetime (1) (1) Sample Test SYMBOL V BR IR VF IF CT τ 15 2.0 100 MIN. 70 200 410 MAX. UNIT V nA mV mA pF ps CONDITIONS.