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ZUMD70-04 - SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES

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SOT323 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES ISSUE 1 - NOVEMBER 1998 .  7  ZUMD70-04 ZUMD70-05 3 2 ! ! 1 SERIES PAIR Device Type: ZUMD70-04 Partmarking Detail: D94 COMMON CATHODE Device Type: ZUMD70-05 Partmarking Detail: D95 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j :T stg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Breakdown Voltage Reverse Leakage Current Forward Voltage Forward Current Capacitance Effective Minority Lifetime (1) (1) Sample Test SYMBOL V BR IR VF IF CT τ 15 2.0 100 MIN. 70 200 410 MAX. UNIT V nA mV mA pF ps CONDITIONS.
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