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ZUMD54C - SILICON EPITAXIAL SCHOTTKY BARRIER DIODES

Features

  • Low VF & High Current Capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– DECEMBER 1998 1 1 ZUMD54 ZUMD54C 3 2 3 2 3 1 SINGLE ZUMD54 Partmark: D8 COMMON CATHODE ZUMD54C Partmark: D8C FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ I F =10mA Repetitive Peak Forward Current Non Repetitive Forward Current Power Dissipation at T amb=25°C Storage Temperature Range JunctionTemperature ¤ t<1s SYMBOL VR IF VF I FRM I FSM P tot T stg Tj VALUE 30 200 400 300 600 330 -55 to +150 125 UNIT V mA mV mA mA mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 30 TYP.
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