Full PDF Text Transcription for BS170F (Reference)
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BS170F. For precise diagrams, and layout, please refer to the original PDF.
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5Ω BS170F S D PARTMARKING DETAIL – MV G ABSOLUTE MAXIMUM RATIN...
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S(ON) = 5Ω BS170F S D PARTMARKING DETAIL – MV G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg SOT23 VALUE 60 0.15 3 ± 20 330 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 60 90 V ID=100µA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.
BS170F Datasheet
