• Part: XP3P011YT
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 241.95 KB
Download XP3P011YT Datasheet PDF
YAGEO
XP3P011YT
Description XP3P011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink. BVDSS RDS(ON) ID -30V 11mΩ -14A PMPAK® 3x3 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range -30 +25 -14 -11 -50 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance,...