XP3P010M
Description
XP3P010 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
BVDSS RDS(ON) ID3
-30V 10mΩ -13.3A
G S SS
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation3 Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
-30
+20
-13.3
-10.6
-50
28.8 m J
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum...
