XP3P010I
Description
XP3P010 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
BVDSS
RDS(ON) ID4
-30V 10mΩ -41A
GD S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
-30
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
+20
-41
-26
-1...
