Datasheet4U Logo Datasheet4U.com

XP10P067YT - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP10P067 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet Details

Part number XP10P067YT
Manufacturer YAGEO
File Size 286.65 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP10P067YT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XP1000 GaAs MMIC Power Amplifier Mimix Broadband
XP1000-BD GaAs MMIC Power Amplifier Mimix Broadband
XP1001 GaAs MMIC Power Amplifier Mimix Broadband
XP1003 GaAs MMIC Power Amplifier Mimix Broadband
XP1003-BD Power Amplifier Mimix Broadband

Other Datasheets by YAGEO

Part Number Description
XP10P135M P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP10P135YT P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP10P500N P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP1011ALMT P-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP10A035MT DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
XP10P067YT Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free G S Description XP10P067 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
Published: |