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E4D20120G Datasheet 20A Silicon Carbide Schottky Diode

Manufacturer: Wolfspeed

Overview

E4D20120G 1200 V, 20 A Silicon Carbide Schottky Diode.

Key Features

  • 4th generation SiC merged PIN Schottky technology.
  • Zero reverse recovery current.
  • High-frequency operation.
  • Temperature-independent switching behavior.
  • AEC-Q101 qualified and PPAP capable.
  • Humidity resistant TO-263-2 Package Types: TO-263-2 PN: E4D20120G Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, pro.