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WSD30L20DN - P-Ch MOSFET

General Description

The WSD30L20DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application

Key Features

  • 1,High density cell design for ultra low Rdson 2,Fully characterized avalanche voltage and current 3,Good stability and uniformity with high EAS 4,Excellent package for good heat dissipation Product Summery VDS RDS(ON) ID -30 18.8mΩ -20A.

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Datasheet Details

Part number WSD30L20DN
Manufacturer Winsok
File Size 1.26 MB
Description P-Ch MOSFET
Datasheet download datasheet WSD30L20DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WSD30L20DN P-Ch MOSFET Description The WSD30L20DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application Features 1,High density cell design for ultra low Rdson 2,Fully characterized avalanche voltage and current 3,Good stability and uniformity with high EAS 4,Excellent package for good heat dissipation Product Summery VDS RDS(ON) ID -30 18.