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WSD30L88DN56 - Dual P-Channel MOSFET

General Description

The WSD30L88DN56 is the highest performance trench Dual P-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • 100% EAS Guaranteed.
  • Green Device Available WSD30L88DN56 Dual P-Channel MOSFET Product Summery BVDSS -30V RDS(ON) 11.5mΩ ID -49A.

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Datasheet Details

Part number WSD30L88DN56
Manufacturer Winsok
File Size 947.13 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet WSD30L88DN56 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description The WSD30L88DN56 is the highest performance trench Dual P-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD30L88DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features ⚫ Advanced high cell density Trench technology ⚫ Super Low Gate Charge ⚫ Excellent CdV/dt effect decline ⚫ 100% EAS Guaranteed ⚫ Green Device Available WSD30L88DN56 Dual P-Channel MOSFET Product Summery BVDSS -30V RDS(ON) 11.