WFF8N65B - Silicon N-Channel MOSFET

Product Overview

Winsemi

Datasheet Details

Part number	WFF8N65B
Manufacturer	Winsemi
File Size	701.94 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFF8N65B Datasheet
Additional preview pages of the WFF8N65B datasheet.

Product details

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.

Features

7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V.
Ultra-low Gate charge(Typical 25nC).
Fast Switching Capability.
100%Avalanche Tested.
Isolation Voltage (VISO=4000V AC).
Maximum Junction Temperature Range(150℃) WFF8N65B Silicon N-Channel MOSFET General.

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Published: Mar 21, 2017 |