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SBP13009D
High Voltage Fast-Switching NPN Power Transistor
Features
◆ ◆ ◆ ◆ Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diode
General Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms
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Test Conditions VBE = 0 IB = 0 IC = 0
Value 700 400 9.0 12 25 6.0 12 100 2.