SBP13007D - High Voltage Fast-Switching NPN Power Transistor

Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Features

Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in free wheeling diode General.

WINSEMI SEMICONDUCTOR

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Datasheet Details

Part number	SBP13007D
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	309.34 KB
Description	High Voltage Fast-Switching NPN Power Transistor
Datasheet	SBP13007D Datasheet
Additional preview pages of the SBP13007D datasheet.

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SBP13007D High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in free wheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.

Published: Apr 14, 2011 |