Datasheet4U Logo Datasheet4U.com

SBP13007-H1 - High Voltage Fast-Switching NPN Power Transistor

Description

This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system.

Features

  • - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S. O. A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General.

📥 Download Datasheet

Datasheet preview – SBP13007-H1

Datasheet Details

Part number SBP13007-H1
Manufacturer SemiWell Semiconductor
File Size 665.12 KB
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet download datasheet SBP13007-H1 Datasheet
Additional preview pages of the SBP13007-H1 datasheet.

📁 Similar Datasheet

  • SBP13007-O - High Voltage Fast-Switching NPN Power Transistor (WINSEMI SEMICONDUCTOR)
  • SBP13007-X - High Voltage Fast-Switching NPN Power Transistor (WINSEMI SEMICONDUCTOR)
  • SBP13007A - High Voltage Fast-Switching NPN Power Transistor (ETC)
  • SBP13007D - High Voltage Fast-Switching NPN Power Transistor (WINSEMI SEMICONDUCTOR)
  • SBP13007S - High Voltage Fast-Switching NPN Power Transistor (WINSEMI SEMICONDUCTOR)
  • SBP13005 - High Voltage Fast-Switching NPN Power Transistor (ETC)
  • SBP13005-O - High Voltage Fast-Switching NPN Power Transistor (Winsemi)
  • SBP13009-K - High Voltage Fast - Switching NPN PowerTransistor (Winsemi)
  • SBP13009-O - High Voltage Fast-Switching NPN Power Transistor (Winsemi)
  • SBP13009-O - High Voltage Fast-Switching NPN Power Transistor (SemiWell)
Other Datasheets by SemiWell Semiconductor
  • SBP13007-H2 - High Voltage Fast-Switching NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
SemiWell Semiconductor SBP13007- H1 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description TO-220 This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system. 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.
Published: |