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S2005AF - SILICON DIFFUSED POWER TRANSISTOR

Description

SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS VBE = 0V MIN MAX 1500 600

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Datasheet Details

Part number S2005AF
Manufacturer Wing Shing Computer Components
File Size 97.01 KB
Description SILICON DIFFUSED POWER TRANSISTOR
Datasheet download datasheet S2005AF Datasheet

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S2005AF GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.5A; IB = 2.0A f = 16KHz IF=4.0A IC=4.5A,IB1=-IB2=1.
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