• Part: S2000
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 82.47 KB
Download S2000 Datasheet PDF
Toshiba
S2000
FEATURES . High Voltage : VCES=1500V . Low Saturation Voltage : Vc E(sat)=5V (Max.) . Fall Time : t f =0.7/ts (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±<12 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc^95°C) Junction Temperature Storage Temperature Range Thermal Resistance SYMBOL VCES Ve BO ic ICM X BM Ptot L stg Rth(j-c) RATING 1500 12.5 +115 -55-115 UNIT 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER TOSHIBA 2-16D1A Weight : 5.2g C/W ELECTRICAL CHARACTERISTICS (Ta=25°c) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter-Base Breakdown Voltage ices v (BR)EB0 DC Current Gain Collector-Emitter Saturation Voltage h FE v CE(sat) Base-Emitter Saturation Voltage Collector-Emitt...