Datasheet4U Logo Datasheet4U.com

S2005 - SILICON DIFFUSED POWER TRANSISTOR

Description

SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PH CONDITIONS VBE = 0V MIN MAX 1500 600

📥 Download Datasheet

Datasheet Details

Part number S2005
Manufacturer Wing Shing Computer Components
File Size 95.75 KB
Description SILICON DIFFUSED POWER TRANSISTOR
Datasheet download datasheet S2005 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
S2000 Silicon NPN Transistor Toshiba
S2000 NPN Transistor INCHANGE
S2000 SILICON POWER TRANSISTOR SavantIC
S2000A Silicon NPN Transistor Toshiba
S2000A SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Wing Shing Computer Components

Part Number Description
S2005A SILICON DIFFUSED POWER TRANSISTOR
S2005AF SILICON DIFFUSED POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S2005A GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PH CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.5A; IB = 2.0A f = 16KHz IF=4.0A IC=4.5A,IB1=-IB2=1.
Published: |