BUT12AF - SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

Description

Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.

Wing Shing Computer Components

Datasheet Details

Part number	BUT12AF
Manufacturer	Wing Shing Computer Components
File Size	71.17 KB
Description	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
Datasheet	BUT12AF Datasheet
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BUT12AF GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 8 20 100 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2=1.2A,VCC=150V 1.

Published: Mar 23, 2005 |