Datasheet4U Logo Datasheet4U.com

BUT11AF - SILICON DIFFUSED POWER TRANSISTOR

Description

Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.

📥 Download Datasheet

Datasheet preview – BUT11AF

Datasheet Details

Part number BUT11AF
Manufacturer Wing Shing Computer Components
File Size 70.95 KB
Description SILICON DIFFUSED POWER TRANSISTOR
Datasheet download datasheet BUT11AF Datasheet
Additional preview pages of the BUT11AF datasheet.

📁 Similar Datasheet

  • BUT11AF - High Voltage NPN Power Transistor (Motorola Inc)
  • BUT11AF - Silicon Diffused Power Transistor (NXP)
  • BUT11AF - SILICON POWER TRANSISTOR (SavantIC)
  • BUT11AF - NPN Silicon Transistor (ON Semiconductor)
  • BUT11AF - NPN Silicon Transistor (Fairchild Semiconductor)
  • BUT11A - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
  • BUT11A - Silicon diffused power transistors (NXP)
  • BUT11A - SILICON POWER TRANSISTOR (SavantIC)
  • BUT11A - High Voltage Fast-switching NPN Power Transistor (nELL)
  • BUT11A - NPN Silicon Power Transistors (MCC)
Other Datasheets by Wing Shing Computer Components
  • BUT11 - NPN SILICON TRANSISTOR
  • BUT12 - SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
  • BUT12A - SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
  • BUT12AF - SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
  • BUT56A - NPN EPITAXIAL SILICON TRANSISTOR

Full PDF Text Transcription

Click to expand full text
BUT11AF GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 2.5A; IB = 0.5A f = 16KHz IC=2.5A,IB1=-IB2=0.5A,VCC=150V 1.
Published: |