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BUT12 - SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

Description

Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.

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Datasheet Details

Part number BUT12
Manufacturer Wing Shing Computer Components
File Size 65.95 KB
Description SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
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BUT12 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V MIN Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2=1.2A,VCC=150V MAX 850 400 8 20 100 1.5 1.
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