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WG50N65LAW1 - IGBT

General Description

WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance.

This device is ideal for low switching frequency power conversion applications.

2.

Key Features

  • Maximum junction temperature 175 °C.
  • Positive Temperature efficient for Easy Parallel Operating.
  • Very soft, fast recovery anti-parallel diode.
  • Low saturation Voltage VCE(sat) = 1.3 V(Typ. ) @ IC = 50 A.
  • EMI Improved Design 3.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WG50N65LAW1 IGBT Rev.01 - 27 September 2023 Product data sheet 1. General description WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance. This device is ideal for low switching frequency power conversion applications. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive Temperature efficient for Easy Parallel Operating • Very soft, fast recovery anti-parallel diode • Low saturation Voltage VCE(sat) = 1.3 V(Typ.) @ IC = 50 A • EMI Improved Design 3. Applications • Solar Converters • UPS, ESS • PFC • Converters 4. Quick reference data Table 1.