Datasheet4U Logo Datasheet4U.com

WG50N65HFW1 - IGBT

General Description

WG50N65HFW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low Vce(sat), and excellent switching performance.

This device offers Best-in-Class efficiency in hard switching and resonant topology.

2.

Key Features

  • Maximum junction temperature 175 °C.
  • Positive temperature efficient for easy paralleling.
  • Very soft, fast recovery anti-parallel diode.
  • High speed switching.
  • EMI Improved Design 3.

📥 Download Datasheet

Other Datasheets by WeEn

Part Number Description
WG50N65HAW1 IGBT
WG50N65HDJ2 IGBT
WG50N65DHJ IGBT
WG50N65DHJ1 IGBT
WG50N65DHW IGBT
WG50N65LAW1 IGBT
WG50N65LDJ1 IGBT
WG50N65MDW1 IGBT
WG50S65HAW1 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WG50N65HFW1 IGBT Rev.02 - 22 November 2024 Product data sheet 1. General description WG50N65HFW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive temperature efficient for easy paralleling • Very soft, fast recovery anti-parallel diode • High speed switching • EMI Improved Design 3. Applications • PFC • Solar converters • UPS • Welding Converters • Mid to high range switching frequency converters 4. Quick reference data Table 1.