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WG50N65DHJ
IGBT
Rev.01 - 23 July 2021
1. General description
High speed IGBT with anti-parallel diode in TO3PF package.
• High speed with low switching losses • Fast and soft recovery anti-parallel diode • Positive VCE(sat) • • • Low thermal resistance
3. Applications
• Power Factor Correction • Welding Converter • Industrial Inverter
4. Quick reference data
Table 1. Quick reference data
Symbol VCE IC
Symbol
Parameter
TC Parameter
j j(max)
Conditions
Static characteristics
VCE(sat)
Collector-emitter saturation VGE
C
j
voltage
Value
Unit
V
A Min Typ Max Unit
-
V
WeEn Semiconductors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
C
collector
3
E
emitter
mb
C
collector
WG50N65DHJ
IGBT
Graphic symbol
6.
WG50N65DHJ Datasheet
