VM6002 - 65V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

65V,35A, RDS(ON) =16mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
ESD protected up to ±1.5kV.

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VM6002 65v n-channel mosfet by Viva Electronics - Datasheet Preview

Datasheet Details

Part number	VM6002
Manufacturer	Viva Electronics
File Size	431.58 KB
Description	65V N-Channel MOSFET
Datasheet	VM6002 Datasheet

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VM6002 65V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D D DD D D DD G G S SS S SS G S BVDSS RDSON ID 65V 16mΩ 35A Features  65V,35A, RDS(ON) =16mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  ESD protected up to ±1.