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VM6001
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK5X6 Pin Configuration D
D D DD
D D DD
G
S SSG
GS S S
S
60V P-Channel MOSFETs
BVDSS -60V
RDSON 12mΩ
ID -70A
Features -60V,-70A, RDS(ON) =12mΩ@VGS = -10V
Fast switching Green Device Available
Suit for -4.