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VM6001 - 60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -60V,-70A, RDS(ON) =12mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number VM6001
Manufacturer Viva Electronics
File Size 622.82 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet VM6001 Datasheet

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VM6001 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D D DD D D DD G S SSG GS S S S 60V P-Channel MOSFETs BVDSS -60V RDSON 12mΩ ID -70A Features  -60V,-70A, RDS(ON) =12mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.